MATSUKI ME7114S-G

MATSUKI · FETs & Power MOSFETs · MPN ME7114S-G

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Specifications

Gate Charge(Qg)37nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)260pF
Current - Continuous Drain(Id)71A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)84pF
RDS(on)10.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.69nF
TypeN-Channel

Technical details

N-Channel 30V 71A 52W Surface Mount DFN(3x3)

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