MATSUKI · FETs & Power MOSFETs · MPN ME66N04T
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| Gate Charge(Qg) | 62nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 172pF |
| RDS(on) | 10.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.522nF |
40V 38A 1.6V 50W 10.5mΩ@10V 1 N-channel TO-220FB-3 Single FETs, MOSFETs RoHS