MATSUKI · FETs & Power MOSFETs · MPN ME60P06T
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| Gate Charge(Qg) | 50.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 55.3A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 90.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 355pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.48nF |
60V 55.3A 3V 90.9W 13mΩ@10V 1 P-Channel TO-220 Single FETs, MOSFETs RoHS