MATSUKI ME60N04

MATSUKI · FETs & Power MOSFETs · MPN ME60N04

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Specifications

Gate Charge(Qg)36nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)39A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)17mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.5nF
TypeN-Channel

Technical details

N-Channel 40V 39A 156W Surface Mount TO-252-3

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