MATSUKI · FETs & Power MOSFETs · MPN ME55N06A-G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 75V |
| Current - Continuous Drain(Id) | 64A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 63W |
| Reverse Transfer Capacitance (Crss@Vds) | 194pF |
| RDS(on) | 9.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.563nF |
N-Channel 75V 64A 63W Surface Mount TO-252-2