MATSUKI ME50P06-G

MATSUKI · FETs & Power MOSFETs · MPN ME50P06-G

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Specifications

Gate Charge(Qg)94nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)373pF
Current - Continuous Drain(Id)61A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)336pF
RDS(on)20mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.707nF
TypeP-Channel

Technical details

P-Channel 60V 61A Surface Mount TO-252-2(DPAK)

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