MATSUKI · FETs & Power MOSFETs · MPN ME50N75T
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| Gate Charge(Qg) | 11nC@4.5V |
|---|---|
| Drain to Source Voltage | 75V |
| Current - Continuous Drain(Id) | 42A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 105W |
| Reverse Transfer Capacitance (Crss@Vds) | 59pF |
| RDS(on) | 22mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.27nF |
75V 42A 4V 105W 22mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS