MATSUKI · FETs & Power MOSFETs · MPN ME50N06A-G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 35.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 59.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF |
| RDS(on) | 22mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.28nF |
| Type | N-Channel |
N-Channel 60V 35.1A 59.5W Surface Mount TO-252-2