MATSUKI ME4970

MATSUKI · FETs & Power MOSFETs · MPN ME4970

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Specifications

Gate Charge(Qg)9.5nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)71pF
RDS(on)13.2mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)841pF

Technical details

N-Channel Array 30V 10A 52W Surface Mount SOP-8

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