MATSUKI · FETs & Power MOSFETs · MPN ME4970
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| Gate Charge(Qg) | 9.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 71pF |
| RDS(on) | 13.2mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 841pF |
N-Channel Array 30V 10A 52W Surface Mount SOP-8