MATSUKI · FETs & Power MOSFETs · MPN ME4825
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| Gate Charge(Qg) | 54nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 6.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 16mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.5nF |
30V 6.9A 1.8V 1.6W 16mΩ@10V 1 P-Channel SOP-8 Single FETs, MOSFETs RoHS