MATSUKI · FETs & Power MOSFETs · MPN ME45N03T-G
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| Gate Charge(Qg) | 11.4nC@5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 58A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 11.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 832pF |
30V 58A 1V 75W 11.5mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS