MATSUKI ME4565AD4

MATSUKI · FETs & Power MOSFETs · MPN ME4565AD4

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Specifications

Gate Charge(Qg)10nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)72pF;120pF
Current - Continuous Drain(Id)22.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.7W
Reverse Transfer Capacitance (Crss@Vds)18pF;35pF
RDS(on)23mΩ@10V;36mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)560pF;860pF
Vgs±25V

Technical details

N-Channel+P-Channel Array 40V 22.1A 2.7W Surface Mount TO-252-4

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