MATSUKI · FETs & Power MOSFETs · MPN ME4565AD4
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| Gate Charge(Qg) | 10nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 72pF;120pF |
| Current - Continuous Drain(Id) | 22.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF;35pF |
| RDS(on) | 23mΩ@10V;36mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 560pF;860pF |
| Vgs | ±25V |
N-Channel+P-Channel Array 40V 22.1A 2.7W Surface Mount TO-252-4