MATSUKI ME4565A-G

MATSUKI · FETs & Power MOSFETs · MPN ME4565A-G

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)6.9A;5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)22mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)565pF

Technical details

N-Channel+P-Channel Array 40V 2W Surface Mount SOP-8

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