MATSUKI ME4425-G

MATSUKI · FETs & Power MOSFETs · MPN ME4425-G

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)67nC@10V
Output Capacitance(Coss)383pF
Current - Continuous Drain(Id)10.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)312pF
RDS(on)19mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.1nF
TypeP-Channel

Technical details

P-Channel 30V 10.6A 2.5W Surface Mount SOP-8

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