MATSUKI ME4174

MATSUKI · FETs & Power MOSFETs · MPN ME4174

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Specifications

Gate Charge(Qg)160nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)15.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)84pF
RDS(on)11mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.64nF
TypeN-Channel

Technical details

N-Channel 30V 15.8A 2.5W Surface Mount SOP-8

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