MATSUKI ME3920-G

MATSUKI · FETs & Power MOSFETs · MPN ME3920-G

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)10.9nC@10V
Current - Continuous Drain(Id)6.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.7W
RDS(on)46mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)37pF
Number2 N-Channel
Input Capacitance(Ciss)375pF
TypeN-Channel

Technical details

N-Channel Array 30V 6.6A 1.7W Surface Mount TSOP-6

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