MATSUKI · FETs & Power MOSFETs · MPN ME3587-G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.18W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 120mΩ@1.8V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 480pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 20V 4.6A 1.18W Surface Mount TSOP-6