MATSUKI · FETs & Power MOSFETs · MPN ME2N7002E
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 350mW |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 43pF |
60V 300mA 1.7V 350mW 1 N-channel SOT-23 Single FETs, MOSFETs RoHS