MATSUKI · FETs & Power MOSFETs · MPN ME2620
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| Gate Charge(Qg) | 14.3nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 1.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 276pF |
| RDS(on) | 756mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 583pF |
| Type | N-Channel |
N-Channel 200V 1.4A 2.2W Surface Mount SOT-223-3