MATSUKI · FETs & Power MOSFETs · MPN ME2614
No reviews yet — be the first to review MATSUKI ME2614.
| Gate Charge(Qg) | 19.2nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 57pF |
| Current - Continuous Drain(Id) | 3.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| RDS(on) | 213mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 849pF |
| Type | N-Channel |
N-Channel 100V 3.3A 2.9W Surface Mount SOT-223-3