MATSUKI · FETs & Power MOSFETs · MPN ME2612
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| Gate Charge(Qg) | 18.3nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 69pF |
| Current - Continuous Drain(Id) | 2.2A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 375mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 543pF |
| Type | N-Channel |
N-Channel 150V 2.2A 2.9W Surface Mount SOT-223