MATSUKI · FETs & Power MOSFETs · MPN ME25N06
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| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 47pF |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 16W |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| RDS(on) | 86mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 523pF |
| Type | N-Channel |
60V 16A 3V 16W 86mΩ@4.5V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS