MATSUKI · FETs & Power MOSFETs · MPN ME2333-G
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| Gate Charge(Qg) | 17.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 141pF |
| Current - Continuous Drain(Id) | 4.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 126pF |
| RDS(on) | 56mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 882pF |
| Type | P-Channel |
P-Channel 20V 4.9A 1.3W Surface Mount SOT-23