MATSUKI · FETs & Power MOSFETs · MPN ME2326A
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| Gate Charge(Qg) | 4.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 400mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 900mW |
| Reverse Transfer Capacitance (Crss@Vds) | 5.6pF |
| RDS(on) | 4.5Ω@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 361pF |
250V 400mA 3V 900mW 4.5Ω@4.5V 1 N-channel SOT-23 Single FETs, MOSFETs RoHS