MATSUKI ME2323D

MATSUKI · FETs & Power MOSFETs · MPN ME2323D

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Specifications

Gate Charge(Qg)10.5nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)75mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)220pF
TypeP-Channel

Technical details

P-Channel 20V 4.2A 1.4W Surface Mount SOT-23

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