MATSUKI ME2320D-G

MATSUKI · FETs & Power MOSFETs · MPN ME2320D-G

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)60nC@4.5V
Current - Continuous Drain(Id)6.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.4W
RDS(on)40mΩ@1.8V
Reverse Transfer Capacitance (Crss@Vds)21pF
Number1 N-channel
Input Capacitance(Ciss)378pF
TypeN-Channel

Technical details

N-Channel 20V 6.4A 1.4W Surface Mount SOT-23

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