MATSUKI ME2309

MATSUKI · FETs & Power MOSFETs · MPN ME2309

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Specifications

Gate Charge(Qg)6.3nC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)1.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)260mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)364pF
TypeP-Channel

Technical details

P-Channel 60V 1.9A 1.4W Surface Mount SOT-23

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