MATSUKI ME2308S

MATSUKI · FETs & Power MOSFETs · MPN ME2308S

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)2.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.04W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)200mΩ@3.3V
Number1 N-channel
Input Capacitance(Ciss)350pF
TypeN-Channel

Technical details

N-Channel 60V 2.6A 1.04W Surface Mount SOT-23

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