MATSUKI · FETs & Power MOSFETs · MPN ME2306D-G
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| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 5.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.39W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 52mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 370pF |
| Type | N-Channel |
N-Channel 30V 5.3A 1.39W Surface Mount SOT-23