MATSUKI ME2306D

MATSUKI · FETs & Power MOSFETs · MPN ME2306D

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Specifications

Configuration-
Gate Charge(Qg)12nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)68pF
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.39W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)52mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)370pF

Technical details

N-Channel 30V 5.3A 1.39W Surface Mount SOT-23

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