MATSUKI ME2306A-G

MATSUKI · FETs & Power MOSFETs · MPN ME2306A-G

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)15.5nC@10V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)5.38A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation1.39W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)50mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)480pF
TypeN-Channel

Technical details

N-Channel 30V 5.38A 1.39W Surface Mount SOT-23

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