MATSUKI · FETs & Power MOSFETs · MPN ME20P06-G
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| Gate Charge(Qg) | 22nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 100pF |
| Current - Continuous Drain(Id) | 17.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 39.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 65mΩ |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 958pF |
| Vgs | ±20V |
P-Channel 60V 17.7A 39.1W Surface Mount TO-252-2(DPAK)