MATSUKI ME20P06-G

MATSUKI · FETs & Power MOSFETs · MPN ME20P06-G

No reviews yet — be the first to review MATSUKI ME20P06-G.

Specifications

Gate Charge(Qg)22nC
Drain to Source Voltage60V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)17.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation39.1W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)65mΩ
Number1 P-Channel
Input Capacitance(Ciss)958pF
Vgs±20V

Technical details

P-Channel 60V 17.7A 39.1W Surface Mount TO-252-2(DPAK)

Related FETs & Power MOSFETs