MATSUKI · FETs & Power MOSFETs · MPN ME20N15
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| Gate Charge(Qg) | 32.3nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 20.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.6V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 110mΩ@7V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.039nF |
| Type | N-Channel |
150V 20.8A 4.6V 62.5W 110mΩ@7V 1 N-channel N-Channel TO-252-3L Single FETs, MOSFETs RoHS