MATSUKI ME15N25F

MATSUKI · FETs & Power MOSFETs · MPN ME15N25F

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)70nC@10V
Current - Continuous Drain(Id)12.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation61.9W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)220mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.277nF
TypeN-Channel

Technical details

N-Channel 250V 12.5A 61.9W Through Hole TO-220F

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