MATSUKI ME15N25-G

MATSUKI · FETs & Power MOSFETs · MPN ME15N25-G

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)70.8nC@10V
Output Capacitance(Coss)112pF
Current - Continuous Drain(Id)17.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
RDS(on)265mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)51pF
Number1 N-channel
Input Capacitance(Ciss)3.48nF
TypeN-Channel

Technical details

N-Channel 250V 17.1A 125W Surface Mount TO-252-3L

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