MATSUKI · FETs & Power MOSFETs · MPN ME15N10-G
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| Output Capacitance(Coss) | 57pF |
|---|---|
| Pd - Power Dissipation | 34.7W |
| Configuration | - |
| Gate Charge(Qg) | 24nC |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 14.7A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| RDS(on) | 100mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 882pF |
N-Channel 100V 14.7A 34.7W Surface Mount TO-252-2(DPAK)