MATSUKI · FETs & Power MOSFETs · MPN ME13N10A
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| Gate Charge(Qg) | 16.4nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 11.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 29.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| RDS(on) | 145mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 524pF |
| Type | N-Channel |
N-Channel 100V 11.3A 29.9W Surface Mount TO-252-3L