MATSUKI · FETs & Power MOSFETs · MPN ME12P04
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| Gate Charge(Qg) | 20.3nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 18.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 91pF |
| RDS(on) | 80mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 921pF |
| Type | P-Channel |
P-Channel 40V 18.6A 25W Surface Mount TO-252-2(DPAK)