MATSUKI · FETs & Power MOSFETs · MPN ME12N15
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| Gate Charge(Qg) | 31.8nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 13.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 44.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 839pF |
N-Channel 150V 13.6A 44.6W Surface Mount TO-252-3