MATSUKI ME12N04

MATSUKI · FETs & Power MOSFETs · MPN ME12N04

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)22A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)28mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)539pF
TypeN-Channel

Technical details

N-Channel 40V 22A 25W Surface Mount TO-252-3

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