MATSUKI · FETs & Power MOSFETs · MPN ME110N10F
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 140A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 108W |
| Reverse Transfer Capacitance (Crss@Vds) | 490pF |
| RDS(on) | 7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.14nF |
100V 140A 4V 108W 7mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS