MATSUKI · FETs & Power MOSFETs · MPN ME10N15-G
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| Gate Charge(Qg) | 160nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 7.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 32.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 538pF |
150V 7.6A 3V 32.1W 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS