MATSUKI · FETs & Power MOSFETs · MPN ME08N20-G
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| Gate Charge(Qg) | 51.7nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 74.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 350mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.61nF |
N-Channel 200V 9A 74.9W Surface Mount TO-252-3