MATSUKI · FETs & Power MOSFETs · MPN ME04N25-G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 3.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 31W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.17nF |
250V 3.3A 3.5V 31W 1 N-channel TO-252 Single FETs, MOSFETs RoHS