MASPOWER MS9N170HGC0

MASPOWER · FETs & Power MOSFETs · MPN MS9N170HGC0

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Specifications

Gate Charge(Qg)82nC@10V
Drain to Source Voltage1.7kV
Output Capacitance(Coss)450pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)4.26Ω@10V
Number1 N-channel
Input Capacitance(Ciss)4.2nF

Technical details

N-Channel 1.7kV 9A 125W Through Hole TO-247

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