MASPOWER MS9N150HGC0

MASPOWER · FETs & Power MOSFETs · MPN MS9N150HGC0

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Specifications

Gate Charge(Qg)60nC@1200V
Drain to Source Voltage1.5kV
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation658W
RDS(on)2.6Ω@10V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)3.15nF

Technical details

N-Channel 1.5kV 9A 658W Through Hole TO-247

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