MASPOWER MS66N85IDB3

MASPOWER · FETs & Power MOSFETs · MPN MS66N85IDB3

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Specifications

Gate Charge(Qg)220nC@10V
Drain to Source Voltage850V
Output Capacitance(Coss)8.5nF
Current - Continuous Drain(Id)66A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.6V
Pd - Power Dissipation1.25kW
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)83mΩ@15V
Number1 N-channel
Input Capacitance(Ciss)8.6nF
TypeN-Channel

Technical details

N-Channel 850V 66A 1250W Through Hole TO-264

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