MASPOWER · FETs & Power MOSFETs · MPN MS55N100HGB3
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| Gate Charge(Qg) | 200nC@10V |
|---|---|
| Drain to Source Voltage | 1kV |
| Output Capacitance(Coss) | 758pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 1.042kW |
| RDS(on) | 280mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.442nF |
| Type | N-Channel |
N-Channel 1kV 55A 1042W Through Hole TO-264