MASPOWER MS50N85IDC0

MASPOWER · FETs & Power MOSFETs · MPN MS50N85IDC0

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Specifications

Configuration-
Gate Charge(Qg)178nC@10V
Drain to Source Voltage850V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation890W
RDS(on)130mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number1 N-channel
Input Capacitance(Ciss)3.01nF

Technical details

N-Channel 850V 50A 890W Through Hole TO-247

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