MASPOWER MS4N250HGC0

MASPOWER · FETs & Power MOSFETs · MPN MS4N250HGC0

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Specifications

Drain to Source Voltage2.5kV
Gate Charge(Qg)74nC
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5.5V
Pd - Power Dissipation520W
RDS(on)19Ω@10V
Reverse Transfer Capacitance (Crss@Vds)48pF
Number1 N-channel
Input Capacitance(Ciss)1.54nF

Technical details

N-Channel 2.5kV 4A 520W Through Hole TO-247

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